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| Si7806BDN New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0145 at VGS = 10 V 0.0205 at VGS = 4.5 V ID (A) 12.6 10.6 FEATURES * TrenchFET(R) Power MOSFETS * PWM Optimized * New Low Thermal Resistance PowerPAK(R) Package with Low 1.07 mm Profile RoHS COMPLIANT APPLICATIONS * DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck PowerPAK 1212-8 3.30 mm S 1 2 3 S S 3.30 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SI7806BDN-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State 30 20 8.0 6.4 40 1.3 1.5 0.8 - 55 to 150 Unit V 12.6 10.1 3.2 3.8 2.0 A W C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 10 sec Steady State Steady State Symbol RthJA RthJC Typical 24 65 1.9 Maximum 33 81 2.4 Unit C/W Document Number: 73081 S-60790-Rev. B, 08-May-06 www.vishay.com 1 Si7806BDN Vishay Siliconix SPECIFICATIONS TJ = 25 C unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamic b a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr Test Conditions VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 12.6 A VGS = 4.5 V, ID = 10.6 A VDS = 15 V, ID = 12.6 A IS = 3.2 A, VGS = 0 V VDS = 15 V, VGS = 4.5 V, ID = 12.6 A VDS = 15 V, VGS = 10 V, ID = 12.6 A f = 10 MHz VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 IF = 3.2 A, di/dt = 100 A/s Min 1.0 Typ Max 3 100 1 5 Unit V nA A A 40 0.012 0.017 34 0.77 8.5 19 3.6 3.0 2 8 12 25 10 35 15 20 40 20 70 1.2 11 24 0.0145 0.0205 S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless noted 40 35 30 I D - Drain Current (A) 25 20 15 10 5 0 0 1 2 3 4 5 3V VGS = 10 thru 5 V 40 35 4V I D - Drain Current (A) 30 25 20 15 TC = 125 C 10 25 C 5 - 55 C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 73081 S-60790-Rev. B, 08-May-06 Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 0.040 0.035 r DS(on) - On-Resistance () C - Capacitance (pF) 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0 5 10 15 20 25 30 35 40 VGS = 4.5 V 25 C unless noted 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 Crss Coss Ciss VGS = 10 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.6 A rDS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 12.6 A Capacitance 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 50 0.030 On-Resistance vs. Junction Temperature 0.025 r DS(on) - On-Resistance () I S - Source Current (A) ID = 2 A ID = 12.6 A TJ = 150 C 10 0.020 0.015 0.010 TJ = 25 C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73081 S-60790-Rev. B, 08-May-06 www.vishay.com 3 Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 0.6 0.4 0.2 V GS(th) Variance (V) 0.0 - 0.2 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (C) Power (W) 30 ID = 250 A 40 50 20 Threshold Voltage 100 rDS(on) Limited Single Pulse Power, Junction-to-Ambient IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc VDS - Drain-to-Source Voltage (V) Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73081 S-60790-Rev. B, 08-May-06 Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73081. Document Number: 73081 S-60790-Rev. B, 08-May-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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